Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages
Résumé
SiC JFETs are experimentally tested to verify their robustness against Lightning induced strokes. The experimental set-up is fully described. A lightning surge generator is built and a SiC JFET is stressed. The full thermal response of the SiC JFET internal temperature is obtained from a specific temperature estimation technique at different time steps during the surge test. This short time thermal response is compared and validated by a conventional 1-D thermal model. This work shows that for a moderate lightning stroke, according to standards [1], the JFET temperature rise is less than 60°C, which is acceptable in most circumstances.