Oxygen vacancy and EC − 1 eV electron trap in ZnO

Gauthier Chicot (1) , Pierre Muret (1) , Julien Pernot (1) , J.L. Santailler (2) , Guy Feuillet (2)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Fourier transform deep level transient spectroscopy has been performed between 80 K and 550 K in five n−type ZnO samples grown by different techniques. The capture cross section and ionization energy of four electron traps have been deduced from Arrhenius diagrams. A trap 1 eV below the conduction band edge is systematically observed in the five samples with a large apparent capture cross section for electrons (1.6 ± 0.4 × 10−13 cm2) indicating a donor character. The assignment of this deep level to the oxygen vacancy is discussed on the basis of available theoretical predictions.

Mots clés: ZnO; Deep Level; DLTS; Diode Schottky; Oxygen vacancy

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Gauthier Chicot, Pierre Muret, Julien Pernot, J.L. Santailler, Guy Feuillet. Oxygen vacancy and EC − 1 eV electron trap in ZnO. Journal of Physics D: Applied Physics, 2014, 47, pp.465103. ⟨hal-00936770v1⟩