Oxygen vacancy and EC − 1 eV electron trap in ZnO
Résumé
Fourier transform deep level transient spectroscopy has been performed between 80 and 550 K
in five n-type ZnO samples grown by different techniques. The capture cross section and
ionization energy of four electron traps have been deduced from Arrhenius diagrams. A trap
1 eV below the conduction band edge is systematically observed in the five samples with a
large apparent capture cross section for electrons (1.6 ± 0.4 × 10−13 cm2) indicating a donor
character. The assignment of this deep level to the oxygen vacancy is discussed on the basis of
available theoretical predictions.
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