Electro-thermal modeling and measurements of SiGe HBTs

Mountakha Dieng (1) , Abdelkader El Rafei (1) , Raphaël Sommet (1) , Raymond Quéré (1)

1 XLIM-C2S2 - C2S2

This paper deals with a comparison between electro-thermal nonlinear simulation and measurements performed on a Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs). The first part describes the simulation approach developed with ANSYS 3D Finite Element (FE) model. The second part describes the measurement process. This one is based on Low Frequency electrical impedance measurements generally achieved with S-parameters Vector Network Analyzer setup. Finally the FE model is compared to a Cauer circuit extracted to represent the measured data.

Domaines: Electronique

Mountakha Dieng, Abdelkader El Rafei, Raphaël Sommet, Raymond Quéré. Electro-thermal modeling and measurements of SiGe HBTs. Thermal Investigations of ICs and Systems (THERMINIC), 2012 18th International Workshop on, Sep 2012, Budapest, France. pp.1-4. ⟨hal-00917827⟩