Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions
Résumé
The shape of tunnel barrier junctions is derived from experimental current density versus bias, J(V), using the normalized differential conductance, NDC=d log J/d log V, to discriminate barrier height, ΦT, and barrier width, dT, effects. Parameterization of the Simmons model for a rectangular tunnel barrier, with NDC≈dTV/(ΦT-qV)1/2, provides physical (dT,ΦT) values for Hg||monomolecular layer--n Si(111) junctions incorporating functionalized n-alkyl layers covalently bonded to silicon.