Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

Abstract : We present results of laser testing of radiation-induced single event burn-out (SEB) in two 600 V Silicon Carbide Schottky power diodes using two-photon absorption at blue wavelength. Transient currents and destructive events are observed and analyzed. A simple physical model of the laser induced current in the tested devices is proposed to evaluate the impact of experimental parameters on the occurrence of an SEB.
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Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1315-1319
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https://hal.archives-ouvertes.fr/hal-00880471
Contributeur : Frédéric Darracq <>
Soumis le : mercredi 6 novembre 2013 - 11:11:23
Dernière modification le : mercredi 6 novembre 2013 - 11:11:23

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  • HAL Id : hal-00880471, version 1

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Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, D. Lewis. Characterization and modeling of laser-induced single-event burn-out in SiC power diodes. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1315-1319. <hal-00880471>

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