Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

Abstract : This paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle. Pre and post-aging SEU threshold laser energy measurements indicate that the cells sensitivity increases over time. The results are confirmed by electrical simulation and the consequences in terms of SEU rate prediction are discussed.
keyword : NBTI SEE Laser
Type de document :
Article dans une revue
Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1325-1328
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https://hal.archives-ouvertes.fr/hal-00880459
Contributeur : Frédéric Darracq <>
Soumis le : mercredi 6 novembre 2013 - 10:59:13
Dernière modification le : mercredi 11 octobre 2017 - 01:12:17

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  • HAL Id : hal-00880459, version 1

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Issam El Moukhtari, Vincent Pouget, Camille Larue, Frédéric Darracq, D. Lewis, et al.. Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1325-1328. 〈hal-00880459〉

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