Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band.

Jérôme Chéron (1) , Michel Campovecchio (1) , Denis Barataud (1) , Tibault Reveyrand (1) , Sébastien Mons (1) , Michel Stanislawiak (2) , Philippe Eudeline (3) , Didier Floriot

1 XLIM-C2S2 - C2S2
2 Thales Air Systems
3 Thales Air Systems

This paper reports a package synthesis method in order to ensure good performances in PAE, output power and bandwidth. The internal matching circuits of the optimized package enable to reach the best impedance pre-matching at fundamental frequencies and also to confine the harmonic impedances seen by the internal GaN power bar into safe-efficiency regions whatever the external impedances presented to the package at second harmonic frequencies. In a 50Ω environment, the packaged GaN HEMT delivers 55 W output power associated with 60% PAE and 13.3 dB power gain at 2.7 GHz. By optimizing source and load impedances at the fundamental frequencies, the packaged GaN HEMT demonstrates more than 58% PAE from 2.6 GHz to 3.0 GHz.

Mots clés: GaN HEMTs; Power amplifiers; harmonic control; high efficiency; packaged powerbars; wide bandwidth

Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Sébastien Mons, et al.. Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band.. Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012), Sep 2012, Dublin, Germany. pp.1-3, ⟨10.1109/INMMIC.2012.6331923⟩. ⟨hal-00793469⟩