Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Philipp Achatz (1) , Julien Pernot (1) , C. Marcenat (2) , Jozef Kacmarcik (3) , Gabriel Ferro (4) , Etienne Bustarret (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
3 CLTP IEP - Centre of Low Temperature Physics
4 LMI - Laboratoire des Multimatériaux et Interfaces

We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360 mK and temperature dependent Raman experiments down to 5 K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7 1020 cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented.

Domains: Materials Science [cond-mat.mtrl-sci]; Strongly Correlated Electrons [cond-mat.str-el]

Philipp Achatz, Julien Pernot, C. Marcenat, Jozef Kacmarcik, Gabriel Ferro, et al.. Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Applied Physics Letters, 2008, 92, pp.072103. ⟨10.1063/1.2885081⟩. ⟨hal-00761033⟩