Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

G. Monier; Luc Bideux; Christine Robert-Goumet; Bernard Gruzza; Matthieu Petit; J.L. Labar; M. Menyhard

Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 2012

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

, , , , (1) , ,

1

G. Monier

Function : Author
PersonId : 750239
IdHAL : guillaume-monier
ORCID : 0000-0002-2368-3110
IdRef : 158623703

Luc Bideux

Function : Author
PersonId : 1322408
IdHAL : luc-bideux
ORCID : 0000-0002-7280-8565

Christine Robert-Goumet

Function : Author
PersonId : 21518
IdHAL : christine-robert-goumet
ORCID : 0000-0003-4215-8124
IdRef : 155142925

Bernard Gruzza

Function : Author

Matthieu Petit

Function : Author
PersonId : 2949
IdHAL : mpetit
ORCID : 0000-0003-3267-9938
IdRef : 08208887X

Centre Interdisciplinaire de Nanoscience de Marseille

CV

J.L. Labar

Function : Author

M. Menyhard

Function : Author

Hal Cinam : Connect in order to contact the contributor

https://hal.science/hal-00724331

Submitted on : Monday, August 20, 2012-3:42:04 PM

Last modification on : Monday, December 11, 2023-1:23:37 PM

Dates and versions

hal-00724331 , version 1 (20-08-2012)

Identifiers

HAL Id : hal-00724331 , version 1

Cite

G. Monier, Luc Bideux, Christine Robert-Goumet, Bernard Gruzza, Matthieu Petit, et al.. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (13-14), pp.1093-1099. ⟨hal-00724331⟩

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Dates and versions

Identifiers

Cite

Export

Collections

Share