Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching Sensitivity

Jérôme Chéron (1) , Michel Campovecchio (1) , Denis Barataud (1) , Tibault Reveyrand (1) , Sébastien Mons (1) , M. Stanislawiak , P. Eudeline , D. Floriot , Wilfried Demenitroux (1)

1 C2S2

This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.

Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Sébastien Mons, et al.. Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching Sensitivity. Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011, Apr 2011, Vienne, Austria. pp.81-84, ⟨10.1109/INMMIC.2011.5773327⟩. ⟨hal-00660836⟩