Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Y. Wang; P. Ruterana; H.P. Lei; Jie Chen; S. Kret; S. El Kazzi; L. Desplanque; X. Wallart

doi:10.1063/1.3622321

Journal Articles Journal of Applied Physics Year : 2011

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

, , , , , , , (1)

1

Y. Wang

Function : Author

P. Ruterana

Function : Author

H.P. Lei

Function : Author

Jie Chen

Function : Author
PersonId : 761941
IdRef : 200253832

S. Kret

Function : Author

S. El Kazzi

Function : Author

L. Desplanque

Function : Author
PersonId : 746179
IdHAL : ludovicdesplanque
ORCID : 0000-0002-2197-4408
IdRef : 076098656

X. Wallart

Function : Author
PersonId : 741251
IdHAL : xavier-wallart
ORCID : 0000-0002-0915-0043
IdRef : 03424879X

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

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Engineering Sciences [physics]

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Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00639828 , version 1 (25-05-2022)

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HAL Id : hal-00639828 , version 1
DOI : 10.1063/1.3622321

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Y. Wang, P. Ruterana, H.P. Lei, Jie Chen, S. Kret, et al.. Investigation of the anisotropic strain relaxation in GaSb islands on GaP. Journal of Applied Physics, 2011, 110, pp.043509-1-8. ⟨10.1063/1.3622321⟩. ⟨hal-00639828⟩

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Investigation of the anisotropic strain relaxation in GaSb islands on GaP

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