Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 2 : IGBT modelling

Stephane Azzopardi (1) , Adel Benmansour (1) , J.-C. Martin (1)

1 IMS - Laboratoire de l'intégration, du matériau au système

The objectives of this revised interim report of step 2 are to illustrate the final simulations and fitting of the Trench IGBT model.

Domains: Electric power

Stephane Azzopardi, Adel Benmansour, J.-C. Martin. Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 2 : IGBT modelling. 2011. ⟨hal-00584189⟩