A Pressure Sensor Based on a HBAR Micromachined Structure

Abstract : In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.
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Submitted on : Friday, March 18, 2011 - 3:59:56 PM
Last modification on : Friday, July 6, 2018 - 3:06:09 PM

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  • HAL Id : hal-00578203, version 1

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T. Baron, D. Gachon, J.-P. Romand, S. Alzuaga, S. Ballandras, et al.. A Pressure Sensor Based on a HBAR Micromachined Structure. 2010 IEEE International Frequency Control Symposium, Jun 2010, New Port Beach, United States. pp.361-364. ⟨hal-00578203⟩

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