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TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

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https://hal.archives-ouvertes.fr/hal-00574499
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Submitted on : Tuesday, March 8, 2011 - 11:11:10 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM

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A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, et al.. TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors. Central European Journal of Physics, Springer Verlag, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩

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