Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
Résumé
Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallisation. The material is characterised by micro-Raman spectroscopy and X-ray diffraction technique. The detector presents extremely low dark current of 100fA at -100V DC bias for a device area of 3.1 mm 2. It also exhibits a rejection ratio between 180nm and 300nm of three orders of magnitude with a very sharp cut-off wavelength at 203nm (∼6.1eV). The simulation, based on a 2D energy-balance model using COMSOL® software, permits to help the designer for the optimum topology determination by means of physical studies. The measurement results are in good agreement with the model predictions.
Domaines
Sciences de l'ingénieur [physics]
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PEER_stage2_10.1088%2F0022-3727%2F43%2F46%2F465104.pdf (407.41 Ko)
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