Temperature dependent properties of InSb and InAs nanowire field-effect transistors

H.A. Nilsson , P. Caroff (1) , C. Thelander , E. Lind , O. Karlström , L.E. Wernersson

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

H.A. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlström, et al.. Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 2010, 96, pp.153505-1-3. ⟨10.1063/1.3402760⟩. ⟨hal-00548729⟩