Influence of ion bombardment on structural and electical properties of SiO2 thin films deposited from O-2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2007

Influence of ion bombardment on structural and electical properties of SiO2 thin films deposited from O-2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

Yolande Sambin  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00540928

Soumis le : lundi 29 novembre 2010-14:57:01

Dernière modification le : jeudi 11 avril 2024-13:08:12

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hal-00540928 , version 1 (29-11-2010)

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  • HAL Id : hal-00540928 , version 1

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A. Bousquet, Antoine Goullet, C. Leteinturier, Nathalie . Coulon, Agnès A. Granier. Influence of ion bombardment on structural and electical properties of SiO2 thin films deposited from O-2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes. 11th International Colloquium on Plasma Processing (CIP - 2007), Jun 2007, Toulouse, France. ⟨hal-00540928⟩

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