Terahertz generation by plasma waves in nanometer gate high electron mobility transistors

J. Lusakowski , Frederic Teppe (1) , Nina Diakonova (1) , Ym Meziani (1) , Wojciech Knap (1) , T. Parenty , S. Bollaert , A. Cappy , V. Popov , Ms Shur

1 GES - Groupe d'étude des semiconducteurs

A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, U-DS, exceeds the threshold value, U-TH; (ii) the resonant frequency can be tuned by U,,, in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U-TH linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U-DS - U-TH). (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.

Domains: Materials Science [cond-mat.mtrl-sci]

J. Lusakowski, Frederic Teppe, Nina Diakonova, Ym Meziani, Wojciech Knap, et al.. Terahertz generation by plasma waves in nanometer gate high electron mobility transistors. physica status solidi (a), 2005, 202, pp.656-659. ⟨10.1002/pssa.200460468⟩. ⟨hal-00540643⟩