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Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C. Ostermaier
G. Pozzovivo
J.F. Carlin
B. Basnar
W. Schrenk
Y. Douvry
Christophe Gaquière
J.C. Dejaeger
1
K. Cico
K. Frohlich
M. Gonschorek
N. Grandjean
G. Strasser
D. Pogany
J. Kuzmik
W. Schrenk
Author
Y. Douvry
Author
Christophe Gaquière
Author IdHAL : christophe-gaquiere ORCID : https://orcid.org/0000-0003-3082-2489
J.C. Dejaeger 1
Author IdHAL : jean-claude-dejaeger
1
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 ([Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX - France)
- Centrale Lille (École Centrale de Lille - Cité Scientifique - CS 20048 59651 Villeneuve d'Ascq Cedex - France)
- Institut supérieur de l'électronique et du numérique (ISEN) (France)
- UVHC - Université de Valenciennes et du Hainaut-Cambrésis (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
- Université de Lille (Lille - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8520 (France)
- UPHF - Université Polytechnique Hauts-de-France (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
Document type :
Journal articles
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https://hal.archives-ouvertes.fr/hal-00473635
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Friday, April 16, 2010 - 8:41:32 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Friday, April 16, 2010 - 8:41:32 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM
Identifiers
- HAL Id : hal-00473635, version 1
- DOI : 10.1109/LED.2009.2029532
Collections
IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES
Citation
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, et al.. Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩
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