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Gate-recess technology for InAs/AlSb HEMTs

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https://hal.archives-ouvertes.fr/hal-00471908
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Submitted on : Friday, April 9, 2010 - 10:36:21 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:23 PM

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E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, et al.. Gate-recess technology for InAs/AlSb HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩

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