Variable temperature characterization of N,N'-Bis(n-penty)terylene-3,4:11,12-tetracarboxylic diimide thin film transistor
Résumé
Organic thin film transistors (OTFT) based on N,N 0 -Bis(n-pentyl)terrylene-3,4:11,12-tetra-
carboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on
SiO 2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of tem-
perature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were
observed: temperature independent behaviour below 150 K and thermally activated
behaviour above 150 K. Activation energies presented values of 85–130 meV depending
on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface
and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and
the work functions of the respective metals.