Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs

M. Malmkvist; E. Lefebvre; M. Borg; L. Desplanque; X. Wallart; Gilles Dambrine; S. Bollaert; J. Grahn

doi:10.1109/EMICC.2007.4412638

Conference Papers Year : 2007

Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs

, , , , , , (1) ,

1

M. Malmkvist

Function : Author

E. Lefebvre

Function : Author

M. Borg

Function : Author

L. Desplanque

Function : Author
PersonId : 746179
IdHAL : ludovicdesplanque
ORCID : 0000-0002-2197-4408
IdRef : 076098656

X. Wallart

Function : Author
PersonId : 741251
IdHAL : xavier-wallart
ORCID : 0000-0002-0915-0043
IdRef : 03424879X

Gilles Dambrine

Function : Author
PersonId : 748125
IdHAL : gilles-dambrine

S. Bollaert

Function : Author
PersonId : 746374
IdHAL : sylvain-bollaert
ORCID : 0000-0002-3812-4389
IdRef : 108875415

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

J. Grahn

Function : Author

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https://hal.science/hal-00362728

Submitted on : Thursday, February 19, 2009-10:53:54 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00362728 , version 1 (19-02-2009)

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HAL Id : hal-00362728 , version 1
DOI : 10.1109/EMICC.2007.4412638

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M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, et al.. Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.24-27, ⟨10.1109/EMICC.2007.4412638⟩. ⟨hal-00362728⟩

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Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs

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