Physical model for the low-dose-rate effect in bipolar devices

J. Boch (1) , Frédéric Saigné (1) , R.D. Schrimpf , J.-R. Vaillé (1) , L. Dusseau (1) , E. Lorfèvre

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

A physical model of the dose-rate effect in bipolar junction transistors is proposed, based on competition between trapping and recombination of radiation-induced carriers in the oxide. The initial recombination of the carriers is considered in this model, taking into account the temperature effect. The general trends obtained with this model are in very good agreement with experimental data. It is also shown that the dose rate effect depends significantly on oxide quality

Mots clés: Bipolar junction transistor; enhanced low-dose- rate sensitivity (ELDRS); elevated temperature irradiation; initial recombination; switching experiment; total dose

Domaines: Electronique

J. Boch, Frédéric Saigné, R.D. Schrimpf, J.-R. Vaillé, L. Dusseau, et al.. Physical model for the low-dose-rate effect in bipolar devices. IEEE Transactions on Nuclear Science, 2006, 53 (6,), pp.3655-3660. ⟨10.1109/TNS.2006.886008⟩. ⟨hal-00329806⟩