Determination of the deposited energy in a silicon volume by n-Si nuclear interaction

H. Chabane (1) , J.-R. Vaillé (1) , T. Mérelle (1) , Frédéric Saigné (1) , L. Dusseau (1) , M. Dumas (1) , J.-M. Palau (1) , Bruno Barelaud , J.-L. Decossas , Frédéric Wrobel (2) , N. Buard (3) , M.-C. Palau (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 LPES - Laboratoire de Physique Electronique des Solides
3 EADS, Corporate Research Center

Domaines: Electronique

H. Chabane, J.-R. Vaillé, T. Mérelle, Frédéric Saigné, L. Dusseau, et al.. Determination of the deposited energy in a silicon volume by n-Si nuclear interaction. Journal of Applied Physics, 2006, 99 (12), pp.124916.1-124916.5. ⟨10.1063/1.2209088⟩. ⟨hal-00329590⟩