Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

T. Mérelle (1) , H. Chabane (1) , J.-M. Palau (1) , K. Castellani-Coulié (1) , Frédéric Wrobel (2) , Frédéric Saigné (1) , B. Sagnes (1) , J. Boch (1) , J.-R. Vaillé (1) , J. Gasiot (1) , P. Roche (3) , M.-C. Palau (1) , T. Carrière (4)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 LPES - Laboratoire de Physique Electronique des Solides, EA 1174
3 ST-CROLLES - STMicroelectronics [Crolles]
4 EADS, Corporate Research Center

A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained byboth three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.

Domaines: Electronique

T. Mérelle, H. Chabane, J.-M. Palau, K. Castellani-Coulié, Frédéric Wrobel, et al.. Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER. IEEE Transactions on Nuclear Science, 2005, 52 (4), pp.1148-1155. ⟨10.1109/TNS.2005.852319⟩. ⟨hal-00328654⟩