Carrier profiles in Fe doped GaN layers grown by MOVPE

M. Azize , Z. Bougrioa , Paul Girard (1) , P. Gibard

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

Continuously-doped and modulation-doped GaN:Fe layers were grown by MOVPE using a 2-step process, that promotes first 3D then 2D growth, allowing to achieve low dislocations densities. Two characterization methods were used to analyse the electrical compensation in GaN:Fe. A first study by Hall effect have been performed down to the sapphire substrate thanks to reactive ion etching steps. The local electrical response of GaN:Fe has also been investigated by cross-sectionnal Electrostatic Force Microscopy (EFM), showing that GaN:Fe is efficiently compensated in the first 0.5 to 2 micron next to the substrate. From these measurements it appears that Fe-doping is more efficient when Fe is incorporated in the GaN grown in a 3D than in a 2D growth-mode. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Domaines: Electronique

M. Azize, Z. Bougrioa, Paul Girard, P. Gibard. Carrier profiles in Fe doped GaN layers grown by MOVPE. physica status solidi (b), 2005, pp.1438-1483. ⟨10.1002/pssc.200461535⟩. ⟨hal-00328400⟩