2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam

L. Cerutti (1) , A. Garnache (1) , A. Ouvrard , M. Garcia , E. Cerda , F. Genty (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

Operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.36 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A circular TEM00 low-divergence laser operation is demonstrated in continuous-wave mode operation from 268 up to 308K. A threshold of 5.5 kW/cm2 at 268K has been measured.

Domaines: Electronique

L. Cerutti, A. Garnache, A. Ouvrard, M. Garcia, E. Cerda, et al.. 2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam. Electronics Letters, 2004, 40 (14), pp.869 - 871. ⟨10.1049/el:20045067⟩. ⟨hal-00327926⟩