RF magnetron sputtering deposition of pyroelectric lithium tantalate thin films on ruthenium oxide

P. Combette (1, 2) , L. Nougaret (1) , Alain Giani (1, 2) , F. Pascal-Delannoy (1)

1 IES - Institut d’Electronique et des Systèmes
2 M2A - Matériaux, MicroCapteurs et Acoustique

Lithium tantalate (LiTaO3) thin films were deposited on ruthenium dioxide (RuO2) electrode by reactive radio frequency (RF) magnetron sputtering with a lithium dioxide-tantalum pentoxide (Li2O2/Ta2O5) (50-50% mole ratio) target. This article presents morphological, structural, dielectric and pyroelectric studies of LiTaO3 thin films as function of growth conditions (RF power, gas pressure and temperature). The final aim is to improve the pyroelectric coefficient for thermal detectors applications. The best pyroelectric coefficient of LiTaO3 thin films (400 nm) equal to 60μC/m2K was obtained for a growth temperature of 400°C, and a pressure of 10 mTorr.

Mots clés: Tantalum; Thin films; Cathode sputtering; Sputter deposition; Physical vapor deposition; Radiofrequency sputtering; Polycrystals; Ruthenium oxides; Lithium tantalates; Ferroelectric materials; Dielectric materials; Growth mechanism; Nanostructured materials; Detectors; Operating conditions

Domaines: Electronique

P. Combette, L. Nougaret, Alain Giani, F. Pascal-Delannoy. RF magnetron sputtering deposition of pyroelectric lithium tantalate thin films on ruthenium oxide. Journal of Crystal Growth, 2007, 304 (1), pp.90-96. ⟨10.1016/j.jcrysgro.2007.02.006⟩. ⟨hal-00327776⟩