GaNAsSb : How does it compare with other dilute III-V nitride alloys ?

J.C. Harmand , A. Caliman , E.V.K. Rao , L. Largeau , J. Ramos , R. Teissier (1) , L. Travers , B. Theys (2) , I.F.L. Dias

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 GPS - Groupe de Physique des Solides

Growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths than GaInNAs alloys grown to date. Its conduction- and valence-band offsets can be independently tuned by adjusting the N and Sb composition, respectively. Since this compound has a single group III element, its electronic structure should be less dependent on alloy configuration than GaInNAs.

Mots clés: Valence bands; Conduction bands; Electronic density of states; Electronic structure; Passivation; Thermal annealing; Electron localization; Energy gap; Dilute systems; Inorganic compounds; Quantum wells; Quaternary compounds; Gallium nitrides; Gallium antimonides; Gallium arsenides; Photoluminescence; Band structure; Band offset

Domaines: Electronique

J.C. Harmand, A. Caliman, E.V.K. Rao, L. Largeau, J. Ramos, et al.. GaNAsSb : How does it compare with other dilute III-V nitride alloys ?. Semiconductor Science and Technology, 2002, 17 (8), pp.778-784. ⟨10.1088/0268-1242/17/8/306⟩. ⟨hal-00327214⟩