Continuous-wave operation of monolithically grown 1.5-μm optically pumped vertical-external-cavity surface-emitting lasers

C. Symonds (1, 2) , I. Sagnes (1) , A. Garnache (3) , S. Hoogland (4) , G. Saint-Girons (1, 5) , Anne Tropper (4) , J.-L. Oudar (1)

1 LPN - Laboratoire de photonique et de nanostructures
2 LPMCN - Laboratoire de Physique de la Matière Condensée et Nanostructures
3 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
4 University of Southampton
5 INL - H&N - INL - Hétéroepitaxie et Nanostructures

Continuous-wave operation, to as high as 7 °C, of 1.5-μm optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The threshold incident pump intensity is <9 kW/cm2.

Domaines: Electronique

C. Symonds, I. Sagnes, A. Garnache, S. Hoogland, G. Saint-Girons, et al.. Continuous-wave operation of monolithically grown 1.5-μm optically pumped vertical-external-cavity surface-emitting lasers. Applied optics, 2003, 42 (33), pp.6678-6681. ⟨10.1364/AO.42.006678⟩. ⟨hal-00327170⟩