1/f noise in metal-oxide-semiconductor transistors biased in weak inversionparameter extraction

J. Rhayem; D. Rigaud; A. Eya'A; M. Valenza; A. Hoffmann

doi:10.1063/1.1343517

Journal Articles Journal of Applied Physics Year : 2001

1/f noise in metal-oxide-semiconductor transistors biased in weak inversionparameter extraction

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J. Rhayem

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D. Rigaud

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Centre d'Electronique et de Micro-optoélectronique de Montpellier

A. Eya'A

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M. Valenza

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Centre d'Electronique et de Micro-optoélectronique de Montpellier

A. Hoffmann

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Centre d'Electronique et de Micro-optoélectronique de Montpellier

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Electronics

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Submitted on : Tuesday, September 23, 2008-11:32:46 AM

Last modification on : Friday, March 24, 2023-2:52:51 PM

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hal-00323794 , version 1 (23-09-2008)

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HAL Id : hal-00323794 , version 1
DOI : 10.1063/1.1343517

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J. Rhayem, D. Rigaud, A. Eya'A, M. Valenza, A. Hoffmann. 1/f noise in metal-oxide-semiconductor transistors biased in weak inversionparameter extraction. Journal of Applied Physics, 2001, 89 (7), pp.4192-4194. ⟨10.1063/1.1343517⟩. ⟨hal-00323794⟩

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1/f noise in metal-oxide-semiconductor transistors biased in weak inversionparameter extraction

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