Surface potential mapping of biased pn junction with kelvin probe force microscopy : application to cross-section devices

A. Doukkali , S. Ledain , C. Guasch (1) , J. Bonnet (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

Kelvin probe force microscopy (KPFM) opens up a new field of applications as advanced technique to characterize cross-sectional electric field as well as distribution of surface potential of functioning integrated circuits. Original sample preparation and connecting method allowing sharp observations on the circuit cross-section with conservation of circuit power supplying is presented. This device preparation method combined with KPFM is an illustration of innovative technique which allows imaging of contact potential difference and topography of tested device structure. Build-in electric field is derived from surface potential and allows to locate the electric junction.

Mots clés: Crossed fields; Electric field effects; Preparation; Integrated circuits; Kelvin probe; Silicon; Electrostatic force; Surface topography; Contact potential; Imaging; Cross sections; Force microscopy; p n junctions; Surface potential

Domaines: Electronique

A. Doukkali, S. Ledain, C. Guasch, J. Bonnet. Surface potential mapping of biased pn junction with kelvin probe force microscopy : application to cross-section devices. Applied Surface Science, 2004, 235 (4), pp.507-512. ⟨10.1016/j.apsusc.2004.03.249⟩. ⟨hal-00329912⟩