Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

B. Bouchet-Fabre (1) , G. Lazar (2) , D. Ballutaud (3) , C. Godet (4) , K. Zellama (2)

1 LFP - URA 2453 - Laboratoire Francis PERRIN
2 LPMC - Laboratoire de Physique de la Matière Condensée - UR UPJV 2081
3 GEMAC - Groupe d'Etude de la Matière Condensée
4 PALMS - Physique des atomes, lasers, molécules et surfaces

RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 °C and 450 °C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The films composition has been measured by nuclear reaction analysis and elastic recoil detection. We will correlate the strong modifications of the electronic properties of the films to their well characterized structural changes. We will show how the substrate temperature acts on the incorporation of nitrogen in carboneous RFMS films and which is the resulting consequence on the sp3/sp2 character of the carbon network.

Mots clés: Carbon nitride; XPS; Raman; FTIR

Domaines: Catalyse

B. Bouchet-Fabre, G. Lazar, D. Ballutaud, C. Godet, K. Zellama. Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films. Diamond and Related Materials, 2008, 17 (4-5), pp.700-704. ⟨10.1016/j.diamond.2007.12.031⟩. ⟨hal-00290145⟩