Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

M.E. Levinshtein (1) , S.L. Rumyantsev (1) , R. Tauk (1) , S. Boubanga (1) , N. Dyakonova (1) , W. Knap (1) , A. Shchepetov (2) , S. Bollaert (2) , Yannick Roelens (2) , M.S. Shur (3)

1 GES - Groupe d'étude des semiconducteurs
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 RPI - Rensselaer Polytechnic Institute

Domaines: Electronique

M.E. Levinshtein, S.L. Rumyantsev, R. Tauk, S. Boubanga, N. Dyakonova, et al.. Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length. Journal of Applied Physics, 2007, 102 (6), pp.064506. ⟨10.1063/1.2781087⟩. ⟨hal-00283040⟩