A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

Renaud Robin (1) , Salim Touati (1) , Karim Segueni (1) , Olivier Millet (1) , Lionel Buchaillot (2, 3)

1 DelfMEMS
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 NAM6 - IEMN - Nano and Microsystems - IEMN

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4µm) with low actuation voltage (7,5V). This design presents also a good contact force and improve the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated.

Domaines: Autre [cs.OH]

Renaud Robin, Salim Touati, Karim Segueni, Olivier Millet, Lionel Buchaillot. A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2008, Apr 2008, Nice, France. pp.56-59, ⟨10.1109/DTIP.2008.4752952⟩. ⟨hal-00277678⟩