Pulsed laser deposition o aluminum nitride thin films for FBAR applications

C. Cibert (1) , Matthieu Chatras (2) , Corinne Champeaux (3) , Dominique Cros (2) , Alain Catherinot (3)

1 SPCTS - Science des Procédés Céramiques et de Traitements de Surface
2 MINACOM
3 Axe 2 : procédés de traitements de surface

Aluminum nitride thin films have been deposited by pulsed laser deposition on fused silica, Si (1 0 0) and Mo(1 1 0)-coated Si substrates. FTIR measurements show that only pure AlN phase is present in films, confirmed by UV-V spectroscopy where a strong absorption peak occurs at 206 nm, characteristic of AlN. C-axis oriented films have been obtained at a temperature of 800 °C on Si (1 0 0) substrate, and at a temperature of 200 °C on Mo(1 1 0)-coated Si substrates. AFM experiments show that AlN film surface is very smooth (3.0 nm rms) without any particulate and droplet.

Mots clés: Aluminum nitride; Pulsed laser deposition; Film bulk acoustic wave resonator

C. Cibert, Matthieu Chatras, Corinne Champeaux, Dominique Cros, Alain Catherinot. Pulsed laser deposition o aluminum nitride thin films for FBAR applications. Applied Surface Science, 2007, 253, pp.8151-8154. ⟨10.1016/j.apsusc.2007.02.124⟩. ⟨hal-00164564⟩