Pulsed laser deposition o aluminum nitride thin films for FBAR applications

Abstract : Aluminum nitride thin films have been deposited by pulsed laser deposition on fused silica, Si (1 0 0) and Mo(1 1 0)-coated Si substrates. FTIR measurements show that only pure AlN phase is present in films, confirmed by UV-V spectroscopy where a strong absorption peak occurs at 206 nm, characteristic of AlN. C-axis oriented films have been obtained at a temperature of 800 °C on Si (1 0 0) substrate, and at a temperature of 200 °C on Mo(1 1 0)-coated Si substrates. AFM experiments show that AlN film surface is very smooth (3.0 nm rms) without any particulate and droplet.
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https://hal.archives-ouvertes.fr/hal-00164564
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Submitted on : Friday, July 20, 2007 - 5:13:22 PM
Last modification on : Thursday, May 30, 2019 - 8:36:20 AM

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C. Cibert, Matthieu Chatras, Corinne Champeaux, Dominique Cros, Alain Catherinot. Pulsed laser deposition o aluminum nitride thin films for FBAR applications. Applied Surface Science, Elsevier, 2007, 253, pp.8151-8154. ⟨10.1016/j.apsusc.2007.02.124⟩. ⟨hal-00164564⟩

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