11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler

T. Bryllert (1) , A. Olsen (2) , J. Vukusic (3) , T.A. Emadi (2) , M. Ingvarson (2) , J. Stake (2) , D. Lippens (3)

1 Skane University Hospital [Lund]
2 Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

Mots clés: gallium arsenide; semiconductor epitaxial layers; microstrip circuits; varactors; indium compounds; millimetre wave diodes; III-V semiconductors; frequency multipliers; aluminium compounds

Domaines: Sciences de l'ingénieur [physics]

T. Bryllert, A. Olsen, J. Vukusic, T.A. Emadi, M. Ingvarson, et al.. 11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler. Electronics Letters, 2005, 41 (3), pp.131-132. ⟨10.1049/el:20057633⟩. ⟨hal-00154899⟩