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Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy

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https://hal.archives-ouvertes.fr/hal-00152078
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Submitted on : Wednesday, June 6, 2007 - 9:45:24 AM
Last modification on : Monday, May 16, 2022 - 4:36:01 PM

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  • HAL Id : hal-00152078, version 1

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X. Wallart, D. Deresmes, F. Mollot. Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy. Applied Physics Letters, American Institute of Physics, 2001, 78, pp.2961-2963. ⟨hal-00152078⟩

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