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Simulation, caractérisation et optimisation de transistor LDMOS sur SOI en technologie BCD – Bipolaire-CMOS-DMOS

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https://hal.archives-ouvertes.fr/hal-00138413
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Monday, March 26, 2007 - 11:18:50 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:48 PM

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  • HAL Id : hal-00138413, version 1

Citation

H. Xu. Simulation, caractérisation et optimisation de transistor LDMOS sur SOI en technologie BCD – Bipolaire-CMOS-DMOS. 2005. ⟨hal-00138413⟩

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