Continuous-wave 1.55 µm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy

Mathieu Jacquemet (1) , Nathalie Picqué (1) , Guy Guelachvili (1) , Arnaud Garnache (2, 3) , Isabelle Sagnes (4) , Martin Strassner (4) , Clémentine Symonds (4)

1 PPM - Laboratoire de Photophysique Moléculaire
2 IES - Institut d’Electronique et des Systèmes
3 TéHO - Térahertz, hyperfréquence et optique
4 LPN - Laboratoire de photonique et de nanostructures

A room temperature operating Vertical External Cavity Surface Emitting Laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by time-resolved Fourier transform interferometry. At an equivalent pathlength of 15 km, the high resolution spectrum of the semiconductor disk laser emission covers 17 nm simultaneously. A noise equivalent absorption coefficient at one second averaging equal to 1.5 10^{-10} cm^{-1}.Hz^{-1/2} per spectral element is reported for the 65 km longest path length employed.

Mots clés: VECSEL; VCSEL; Spectrometers; Semiconductor lasers; Vertical cavity surface emitting lasers; Spectroscopy; high-resolution; infrared; lasers

Domaines: Optique [physics.optics]

Mathieu Jacquemet, Nathalie Picqué, Guy Guelachvili, Arnaud Garnache, Isabelle Sagnes, et al.. Continuous-wave 1.55 µm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy. Optics Letters, 2007, 32 (11), pp.1387-1389. ⟨10.1364/OL.32.001387⟩. ⟨hal-00135953⟩