Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

G. Mahieu , B. Grandidier (1) , D. Deresmes (1) , J.-P. Nys (1) , D. Stievenard (1) , P. Ebert

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

G. Mahieu, B. Grandidier, D. Deresmes, J.-P. Nys, D. Stievenard, et al.. Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs. Physical Review Letters, 2005, 94, pp.26407-1-4. ⟨10.1103/PhysRevLett.94.026407⟩. ⟨hal-00126234⟩