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Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist

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https://hal.archives-ouvertes.fr/hal-00125635
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Submitted on : Monday, January 22, 2007 - 10:27:53 AM
Last modification on : Tuesday, November 30, 2021 - 9:02:04 AM

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  • HAL Id : hal-00125635, version 1

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G. Larrieu, E. Dubois. Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist. Journal of Vacuum Science and Technology B, 2005, 23, pp.2046-2050. ⟨hal-00125635⟩

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