Single Barrier Varactors and Resonant Tunneling Diodes for Millimeter Waves Applications

Patrick Mounaix (1) , Eric Lheurette (1) , Francis Mollot (1) , Patrice Salzenstein (1) , Didier Lippens (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

InGaAs/InAlAs/AlAs Single Barrier Varacors (SBV's) and InGaAs/AlAs double barrier Resonant Tunneling Diodes (RTD's) were integrated in a planar configuration. The epilayers, designed for millimeter-wave applications, were grown by gas sources MBE and processed in a two step mesa technology. Both types of devices exhibit very good charcateristics with very low leakage current for SBV's up to 5V whili RTD's high peak current densities and peak-to-valley ratios in the range 175-135 kA/cm² and 6:1 to 9:1 were found at 300K. Impedance measurements show that submillimeter wave operation can be expected for both devices on the basis of extremely high current densities on one hand and of very low series resistances (contact resistivity of 6E-7 Ohm.cm²) on the other hand.

Mots clés: III-V heterostructures; tunneling devices; varactor diodes; millimeter wave operation

Domaines: Autre

Patrick Mounaix, Eric Lheurette, Francis Mollot, Patrice Salzenstein, Didier Lippens. Single Barrier Varactors and Resonant Tunneling Diodes for Millimeter Waves Applications. Proceeding of the European Space Agency, ESTEC. workshop, Noordwijk, Netherlands, 5-7 December, 1995, 1995, Noordwijk, Netherlands. pp.1-10. ⟨hal-00076912⟩