Electrical activity of Er and Er-O centers in silicon

D. Prezzi; A. G. Eberlein T.; R. Jones; S. Filhol J.; J. Coutinho; J. Shaw M.; R. Briddon P.

Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2005

Electrical activity of Er and Er-O centers in silicon

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1

D. Prezzi

Function : Author

A. G. Eberlein T.

Function : Author

R. Jones

Function : Author

S. Filhol J.

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Laboratoire de structure et de dynamique des systèmes moléculaires et solides

J. Coutinho

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J. Shaw M.

Function : Author

R. Briddon P.

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Béatrice Housse : Connect in order to contact the contributor

https://hal.science/hal-00020412

Submitted on : Thursday, March 9, 2006-5:13:08 PM

Last modification on : Friday, March 24, 2023-2:52:47 PM

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hal-00020412 , version 1 (09-03-2006)

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HAL Id : hal-00020412 , version 1

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D. Prezzi, A. G. Eberlein T., R. Jones, S. Filhol J., J. Coutinho, et al.. Electrical activity of Er and Er-O centers in silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.245203. ⟨hal-00020412⟩

Electrical activity of Er and Er-O centers in silicon

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