Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node

Melanie Raine (1) , G. Hubert (2) , M. Gaillardin (1) , L. Artola (2) , Philippe Paillet (1) , Sylvain Girard (1) , J.E. Sauvestre (1) , A. Bournel (3)

1 DAM/DIF - DAM Île-de-France
2 ONERA - The French Aerospace Lab [Toulouse]
3 IES - Institut d'Electronique Fondamentale

The relative contribution of the radial ionization profile on SEE prediction is investigated using MUSCA-SEP3 , in comparison with the classical approach considering the ion track as a series of punctual charges. The new approach is validated against experimental results, for three technology generations of PDSOI transistors and for two generations of SOI SRAM cells, showing better agreement than the punctual approach. The impact of the radial approach on the evaluation of SEU cross section as compared to the punctual approach is then investigated for nanometric SOI SRAM cells, beyond the 32-nm technological node. The influence of the radial dimension of the ion track is shown to increase with technology generation. The impact of the ion mass and energy on the ratio between radial and punctual SEU cross section is also investigated.

Domains: Engineering Sciences [physics]

Melanie Raine, G. Hubert, M. Gaillardin, L. Artola, Philippe Paillet, et al.. Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node. IEEE Transactions on Nuclear Science, 2011, 58 (3), pp.840 - 847. ⟨10.1109/TNS.2011.2109966⟩. ⟨ujm-01011665⟩