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Étude du profil en profondeur des modifications induites par irradiation aux ions du substrat d'alpha-Al2O3 et du film mince GaN

Abstract : Nitride semiconductors are attractive materials for the development of optical and electronic devices. Some of these applications can expose materials to extreme environments and especially radiation of heavy ions at different energies. In this thesis, the study focused first on behaviour evolution under irradiation of alpha-Al2O3 and then of GaN thin film, in order to establish a profile of damage evolution as function of the depth. Concerning lattice parameter, a similar behaviour was observed for both materials. An important increase of lattice parameter parallel to ion beam was highlighted while few variations was noted for the lattice parameter perpendicular to ion beam. Formation of amorphous layer for alpha-Al2O3 and highly disordered layer for GaN were observed in surface. Layers thicknesses increase as function of the fluence with an increase of residual stresses in material. Using different results and assumptions, two damage profiles as function of the depth have been proposed. In addition, nanoindentation has shown hardness and modulus of elasticity parameter evolve highly under irradiation as function of the fluence.
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Submitted on : Thursday, November 14, 2019 - 5:19:55 PM
Last modification on : Monday, February 17, 2020 - 7:01:04 AM
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Alexis Ribet. Étude du profil en profondeur des modifications induites par irradiation aux ions du substrat d'alpha-Al2O3 et du film mince GaN. Science des matériaux [cond-mat.mtrl-sci]. Université Caen Normandie, 2019. Français. ⟨tel-02364166⟩

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