Abstract : In an experimental investigation carried out on multilayer silicon homostructures (of the n+-n-n+ type) an electric interaction between the two homointerfaces through majority carriers as a function of the geometrical factor has been shown. The two model homointerfaces were formed in the same monocrystal (CVD epitaxy) by only an abrupt change in the impurity doping level. Samples differing in the spacing of their parallel interfaces were characterized in the stationary and steady states (static and quasi-static regimes) to reveal modifications in their macroscopic transport. It has been demonstrated that the thermionic emission current, normally taken into account in the barrier transport (with large potential barriers) dominates in only two of five characteristic bias intervals. The two other phenomena, also related to the geometrical factor, i.e. the diffusion-drift and tunneling currents, dominate the conduction over practically the whole dc-bias range. These results allow the study of short and long range electrical interactions as well as the free carrier micromovement of simple and complex semiconductor interfaces of multilayer devices.