Picosecond investigation of photorefractive and free carrier gratings in GaAs: EL2 and CdTe: V

Philippe Delaye (1) , Kestutis Jarašiunas (1) , Jean-Claude Launay (2) , Gérald Roosen (1)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Manolia
2 PRAME - Pôle de Recherche Aquitain pour les Matériaux dans l'Espace

Laser induced picosecond transient gratings are used to study carrier transport via free carrier and photorefractive nonlinearities in serni-insulating undoped GaAs and vanadium doped CdTe crystals. Absorption and carrier generation mechanisms are investigated through the variation of grating strengths with input fluence. We show that grating decays are governed by mostly ambipolar diffusion and by its variation with fluence. Ambipolar mobilities are measured: μa≈135 cm2.V-1.s-1 in CdTe and μa≈760 cm2.V-1.s-1 in GaAs.

Domaines: Articles anciens; Optique [physics.optics]

Philippe Delaye, Kestutis Jarašiunas, Jean-Claude Launay, Gérald Roosen. Picosecond investigation of photorefractive and free carrier gratings in GaAs: EL2 and CdTe: V. Journal de Physique III, 1993, 3 (7), pp.1291-1303. ⟨10.1051/jp3:1993199⟩. ⟨jpa-00248999⟩