Dielectric properties of glassy Se80Te20 and Se 80Te10M10 (M = Cd, In and Sb)
Résumé
The temperature and frequency dependence of dielectric constant and loss is measured in glassy Se80Te20 and Se80Te 10M10 (M = Cd, In and Sb) in the temperature range 100 K to 330 K and the frequency range 120 Hz to 10 kHz. The dielectric constant and loss are independent of temperature and frequency at low temperatures (T < 200 K). However, at higher temperatures, strong dielectric dispersion occurs. The results are interpreted in terms of a dipolar model which considers the hopping of charge carriers over a potential barrier between charged defect states.
Mots clés
chalcogenide glasses
defect electron energy states
hopping conduction
permittivity
selenium compounds
semiconductors
temperature dependence
Se sub 80 Te sub 10 M sub 10
frequency dependence
dielectric constant
dielectric dispersion
dipolar model
hopping
charge carriers
charge defect states
100 to 330 K
120 to 10000 Hz
Se sub 80 Te sub 20
Se sub 80 Te sub 10 Cd sub 10
Se sub 80 Te sub 10 In sub 10
Se sub 80 Te sub 10 Sb sub 10
Domaines
Articles anciens
Origine : Accord explicite pour ce dépôt
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